- 您现在的位置：买卖IC网 > Sheet目录131 > DSEP40-03AS (IXYS)DIODE HFRED 300V 40A TO-263
    DSEP40-03AS 0.0 0.4 0.8 1.2 1.6 2.0 10 20 30 [A] 40 50 60 0 200 400100 300 500 20 30 40 50[ns] 60 70 80 0.001 0.01 0.1 1 10 0.1 1 0 40 80 120 160 0.2 0.4 0.6 IRR 0.8 1.0 1.2 1.4 [°C] [A/μs] [s] 0 100 200 300 400 500 100 200 300 [ns] 400 500 600 700 800 2 4 6 8 [V] FR 10 12 14 16 0 100 200 300 400 500 2 4 6 8 [A] 10 12 14 16 0 100 200 300 400 500 0.1 0.2 0.3 0.4 0.5 [μC] [V] [A/μs] [K/W] IF =60 A 30 A 15 A IF = 60 A 30 A 15 A Qrr IF = 60 A 30 A 15 A V tfr 125°C TVJ =125°C VR = 200 V TVJ =125°C VR = 200 V IF =30A TVJ =125°C VR = 200 V TVJ = 150°C TVJ = 125°C VR =200 V Fig. 1 Forward current IF versus forward voltage VF Fig. 2 Typ. reverse recovery charge Qrr versus -diF/dt Fig. 3 Typ. reverse recovery current IRR versus -diF/dt Fig. 4 Dynamic parameters Qrr,IRR versus TVJ Fig. 5 Typ. reverse recovery time trrversus -diF/dt Fig. 6 Typ. forward recovery voltage VFR & forward recovery time tfr vs. diF/dt Fig. 8 Transient thermal impedance junction to case 25°C [A/μs] [A/μs] 0 100 200 300 400 500 2 4 [μJ] 6 8 10 12 14 [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF/dt TVJ=125°C VR = 200 V Rthi [K/W] 0.139 0.176 0.305 0.23 t i [s] 0.00028 0.0033 0.028 0.17 IF =15 A 30 A 60 A Fast Diode IXYS reserves the right to change limits, conditions and dimensions. 20130320b Data according to IEC 60747and per semiconductor unless otherwise specified ? 2013 IXYS all rights reserved |